The effects of doping and buffer layers on the structure and electrical properties of Pb(Zr,Ti)O-3 (PZT) thin films on Pt/TiO2/SiO2/Si substrate derived from inorganic zirconium precursor have been studied. Ta doping optimizes the structure text-are and reduces the leakage current of PZT films, whereas Ce-doped films have large amount of pyrochlor phase formed and a large leakage current. Dielectric measurement indicates that Ce and Ta doping can greatly change the dielectric constant of films. Doped and undoped PZT films exhibit an ohmic-like current even at high field. PbTiO3 (PT) and LaNiO3 (LNO) were used as PZT buffer layers on Pt/TiO2/SiO2/Si substrate. XRD patterns show that PT buffer layers can decrease the crystallization temperature of PZT films (by about 50 degreesC). No pyrochlor phase was detected in PZT/PT and PZT/LNO films. Additionally, PZT/LNO films exhibit good fatigue characteristics compared with films directly deposited on Pt-coated Si substrate. (C) 2002 Elsevier Science B.V. All rights reserved.