CuInTe2 films were synthesized by co-evaporating Cu, In and Te from three different elemental sources onto glass substrates. The films were polycrystalline in nature and oriented preferentially in the (112) direction. Lattice constants were determined from the X-ray diffraction analysis. The optical band gap, determined from wavelength dependence of optical transmittance, varied within 0.86-0.98 eV with variation of Cu/In ratio within 0.68-1.42. The grain size for CuInTe2 film deposited at optimum substrate temperature (similar to770 K) was similar to0.5 mum. The electrical (dark conductivity, photoconductivity and carrier concentration) and optical properties of the films with different Cu/In and Te/(Cu + In) ratios were studied to ascertain the carrier transport mechanism in the films. (C) 2002 Elsevier Science B.V. All rights reserved.