ZnSe semiconductor thin films have been deposited by electrocrystallization technique under potentiostatic condition from an aqueous electrolyte consisting of ZnSO4 and SeO2. The growth conditions like deposition potential, etc., for the co-deposition of Zn and Se were optimized by constructing voltammogram. The depositions were carried out at different experimental conditions over the range of optimized conditions. As-deposited ZnSe films were annealed and both as-deposited and annealed films were analyzed by different characterization techniques. The XRD analysis of the electrocrystallized films identified the cubic phase formation of ZnSe polycrystalline films. The Raman analysis confirmed the formation of ZnSe by exhibiting the peak at 252 cm(-1) corresponding to the LO phonon of ZnSe. The surface morphology of the film was analyzed by means of SEM technique. The results are presented in detail. (C) 2003 Elsevier B.V. All rights reserved.