Zr-rich PZT thin films were synthesized by metallorganic decomposition and their dielectric and pyroelectric properties were investigated with different ratios of zirconium/titanium and poling condition. All the films became effectively (111) textured and well crystallized at the annealing temperature of 700degreesC. With increasing Zr content, coercive field increased and voltage dependent capacitance curve appeared asymmetrical, indicating the presence of antiferroelectric phase, PbZrO3, in film composition. The pyroelectric coefficient in the practically applicable temperature ranges of 20-60degreesC was found to be maximum for the thin film with 0.85 mol of zirconium in PZT. Further increase in zirconium content led to severe deterioration in pyroelectric properties. The values of pyroelectric coefficient and figures of merit were greatly influenced by poling direction and temperature. The result was explained in terms of electric phase and state of polarization in film. (C) 2004 Elsevier B.V. All rights reserved.