Photovoltaic (PV) devices, in which 4,4',4"-tris-(2-methylphenylphenylamino)triphenylamine (m-MTDATA) and neodymium (dibenzoylmethanato)3(bathohenanthroline) (Nd(DBM)(3)bath) were used as electron donor and acceptor, respectively, have been fabricated. The PV performance of the diode has been affected largely by two techniques that one is inserting a thin LiF layer between Nd(DBM)(3) bath and Al electrode and the other is treating the ITO surface through ultraviolet light (254 nm). The short current (I-sc) of the PV diode has been increased from 0.057 to 0.145 mA cm(-2) through the two techniques together. It is interesting to find that the power conversion efficiency can also be increased two-fold compared with that simple double layer diode without any treatments. (c) 2005 Elsevier B.V. All rights reserved.