Journal of Crystal Growth, Vol.208, No.1-4, 33-36, 2000
Direct observation of LPE heterogrowth of GaAs on a GaP substrate
In order to observe the early stage of GaAs growth on a GaP substrate, a liquid-phase epitaxial (LPE) growth system with a long distance microscope was constructed. Successive photographs of growing GaAs islands within 3 min after starting the growth are presented.