We succeeded in growing an InxGa1-xAs single crystal with a uniform composition in the growth direction using the multicomponent zone growth (MCZG) method. An InGaAs crystal, grown on a GaAs seed using the vertical gradient freeze technique (VGF), was used as an InGaAs seed for the MCZG method. We studied the controllability of the InGaAs crystal composition grown using the MCZG method and the growth conditions for the InGaAs MCZG single crystal. Consequently, we found that: (1) It is possible to obtain an InGaAs crystal with a uniform composition in the growth direction by adjusting the cooling rate of the growth zone. (2) An InGaAs MCZG single crystal can be grown on an InGaAs single seed by suppressing the occurrence of fast crystal growth at the beginning of MCZG. The MCZG region obtained was 5 mm long and was a single crystal. The uniform InAs composition region of 0.3 was 3 mm long. The orientation of the crystal was (0 0 1).