We have investigated growth of GaInNAs by MOCVD using dimethylhydrazine (DMHy) and by CBE using RF-radical nitrogen. It was found that there was a large difference in nitrogen incorporation characteristics between the two growth methods. Nitrogen composition of MOCVD increased with a superlinear characteristic against nitrogen source how and indium composition enhanced such a characteristic. CBE showed a linear incorporation characteristic of nitrogen composition due to the strong reactivity of nitrogen atoms. Photoluminescence intensity was decreased by increasing emission wavelength for both growth techniques, however, the degradation behavior seemed to depend on the nitrogen incorporation characteristic. The hydrogen and carbon concentration of MOCVD grown sample was more than ten times larger than that of CBE grown samples. The comparison of growth characteristics and material qualities may provide useful information for improving the GaInNAs crystal quality.