We present a novel technique to grow AIN on sapphire heteroepitaxially by the use of high-density active nitrogen species, which are generated at the resonance point of nitrogen-ECR plasma? where metal Al is evaporated The AlN film having the c-axis perpendicular to the c-plane of sapphire was obtained at the growth rate of 0.5 mu m/h with the substrate temperature lower than 600 degrees C. The him had the band gap energy of 6.0 eV and good Raman selection rules.