MnAs was grown on GaAs(0 0 1) substrates with V-grooves along the [(1) over bar 1 0] direction having (1 1 1)A sidewalls by molecular-beam epitaxy. The epilayer shapes have been investigated using secondary electron microscope observations after growth. It was found that by adjustment of the direction of Mn flux, MnAs layer can be grown only on one side of the (111)A sidewalls of V-grooved substrates. X-ray diffraction measurements and reflection high-energy electron diffraction observations showed that the growth plane of MnAs epilayers on the (1 1 1)A sidewall was ((1) over bar 1 0 1) with MnAs[(1) over bar (1) over bar 2 0]\\GaAs[(1) over bar 1 0] and MnAs[1 (1) over bar 0 2]\\GaAs[1 1 (2) over bar], and the c-axis was almost parallel to the GaAs[0 0 1] direction. Magnetization measurements indicated that the easy axis of the MnAs epilayer is in plane along the V-grooves, which is parallel to the MnAs[(1) over bar (1) over bar 2 0] direction.