Several pairs of (1 0 0)Si wafers were directly bonded with known misorientation angles, between 0.1 and 11 degrees, to form artificial twist boundaries. The structure and electrical property of these boundaries were studied by means of transmission electron microscopy (TEM) and electron-beam-induced-current (EBIC) method. TEM images showed that the dominant defects at boundaries were screw dislocations which compensate the twist component. All the twist boundaries were EBIC active at room temperature and their contrast values have increased with the increase in the twist angle. The EBIC profiles of twist boundaries were well fitted with the Donolato's model. Although EBIC contrasts of all the boundaries increased with decreasing temperature, the increase of 0.1 degrees boundary was the most significant. Such temperature dependencies indicates that shallow levels are dominant in the smaller angle boundaries, while certain amounts of deep levels are introduced in larger angle boundaries due to dislocation interaction.