The neighborhood of the dislocation wall in a ZnSe crystal grown by the vapor-phase method was analyzed by light scattering tomography (LST) and a multi-channel Raman scattering apparatus. We observed the decrease in Rayleigh scattering intensity, the change in wave number and the half-width of optical phonons in the neighborhood of the dislocation wall. The stress near the wall was estimated using uniaxial stress Raman data. This result was considered from the viewpoint of stress by the precipitate.