Gallium-doped zinc oxide thin films were deposited by the spray pyrolysis technique onto Coming 7059 glass substrates at a temperature of 350 degrees C using a precursor solution of zinc acetate in isopropyl alcohol. The films were prepared using different gallium concentrations keeping the other deposition parameters such as air and solution Row rates and solution concentration constant. The variations of the structural. electrical and optical properties with the doping concentration were investigated. X-ray diffraction data showed that the films were polycrystalline with the (0 0 2) preferred orientation. The textur e coefficient and grain size were evaluated for different doping concentrations. The films with 5.0 at % gallium had a resistivity of 1.5 x 10(-3) Ohm cm and a transmittance of 85% with an energy band gap of 3.35 eV.