Ce-doped SrGa2S4 compound is expected as a new host material of blue EL devices. However, the basic properties of bulk single crystals have not been fully clarified, since this compound has been mostly synthesized in the form of polycrystals or thin films. Here, we firstly present the pseudo-binary phase diagram of the SrS-Ga2S3 system constructed in accordance with our DTA data for single-crystal growth of SrGa2S4. It is shown that SrGa2S4 compound has a congruent melting point and a eutectic reaction in the side of excess of Ga2S3 concentration. On the basis of the phase diagram, single crystals of SrGa2S4 are grown using Ga2S3 as a self-flux in a horizontal Bridgman furnace. Colorless and transparent crystals having a typical size 2 x 2 x 2 mm(3) are obtained.