Crystal growth experiments were conducted by: (a) melting together two III-V compounds (InAs, GaSb) and (b) melting together one III-V compound (InSb or GaSb) and one II-VI compound (CdTe or HgTe). These melts contain four different atoms, but in comparison to the conventional quaternary alloys A(x)C(1-x)B(y)D(1-y), have a constrain in the composition given by x = y, and therefore can be designated as "quasi-binary". The composition of these melts is (AB)(1-x)(CD)(x). Bulk crystals were produced from these melts by directional solidification and Czochralski pulling. Our goal was to determine whether the grown crystals will remain "quasi-binary" or, due to segregation will turn conventional quaternary x not equal y. The grown crystals were free of cracks, which call be explained by low lattice mismatch. Using the electron probe micro-analysis (EPMA). it was determined that quasi-binary (InSb)(1-x)(CdTe)(x) crystals were obtained. The other systems yielded conventional quaternary specimens with x not equal y.