Cr-4, Ca-2 GeO4 crystals were grown by pulling technique from CaF2-based solution. RF-heated Czochralski equipment designed for conventional growth procedure from a melt was employed. Stable growth conditions without constitutional supercooling have been created for the pulling rate up to 0.25 mm/h. Only Cr4+-substitution took place in the Ca2GeO4 crystal sites whether the growth atmosphere was nitrogen or air.