화학공학소재연구정보센터
Journal of Crystal Growth, Vol.211, No.1-4, 360-364, 2000
The influence of thermoelectromagnetic convection (TEMC) on the Bridgman growth of semiconductors
Application of a low-intensity axial magnetic field can promote significant convection Juring Bridgman growth of GeSi when resident thermoelectric currents at the growth interface are large due to the difference of thermoelectric powers of the melt and of the crystal and the tangential temperature gradient at the interface. Thermoelectromagnetic convection (TEMC) in the GeSi melt is characterized by a meridional flow driven by the rotation of the fluid due to the azimuthal Lorentz force from currents in the radial direction concentrated near the interface and an axial magnetic field. In this work. we developed a computational model to study convection of the GeSi melt in varying g and magnetic field intensity levels.