Journal of Crystal Growth, Vol.212, No.1-2, 360-363, 2000
The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53Ga0.47As multilayer on InP substrate
Self-organized InAs/In0.53Ga0.47As quantum dot (QD) multilayers were grown on InP substrate by molecular beam epitaxy. The structural and optical properties were characterized by using cross-sectional transmission electron microscopy (TEM) and photoluminescence (PL), respectively. Vertically aligned InAs quantum dots multilayer on InP substrate is demonstrated for the first time. Photoluminescence with a line width of similar to 26 meV was observed from the QDs multilayer.