The use of allyl-iso-propyltelluride as the tellurium precursor for the growth of CdTe, HgTe and (Hg,Cd)Te by metal organic vapour-phase epitaxy has been investigated. It has proved to be an efficient source of tellurium with growth rates for HgTe and (Ng,Cd)Te of up to 10 mu m h(-1) at 300 degrees C. The best CdTe was grown at 4.5 mu m h(-1) under Me,Cd-rich conditions at 300 degrees C in the presence of Hg vapour. Crown Copyright