Journal of Crystal Growth, Vol.214, 68-71, 2000
ZnO films grown under the oxygen-rich condition
We have found an ultraviolet emission, whose energy is higher than the band gap of wurtzite ZnO, in the ZnO films grown under an oxygen-rich condition. ZnO films were grown on sapphire substrate by remote plasma-enhanced chemical vapor deposition using Zn(C2H5)(2) and CO2. III the ZnO films grown in an optimum condition, a sharp band edge emission (3.3 eV) and a broad visible emission (2.2eV) were observed in cathodoluminescence spectra. In the ZnO films grown under the oxygen-rich condition, on the other hand, broad luminescence peaks at 3.8 and 3.0 eV appeared instead of the band edge emission. X-ray diffraction study suggested that a small amount of cubic ZnO phase was introduced in the films. The anomalous emissions are tentatively attributed to the unknown surface structure or a cubic ZnO structure.