A single-crucible technique for segregation reduction was used in liquid-encapsulated Czochralski (LEC) growth of In-doped GaAs to grow single crystals homogeneous in composition. The melt was replenished from below with a solid feed of the targeted crystal composition C-0. The crucible was deeper than that in conventional LEC in order to accommodate the solid feed at the bottom as well as the melt at the top. The melt was leveled (enriched) to C-0/k, where k is the effective segregation coefficient. Two heaters were used, the top one for the melt and the bottom one for the solid feed, in order to minimize changes in the melt depth and hence the melt composition. The need for a second crucible and the problem of B2O3 plugging in double-crucible techniques were both eliminated. Crystals with essentially uniform InAs concentrations of 0.04 and 0.1 mol% InAs were grown.