The rotatory Bridgman method was used to grow ternary InSb(1-x)Bix crystals. In this method the ampoule was subjected to ACRT like reversible rotation at a peak rate of 60 rpm. High-quality crystals of 8 mm diameter and 25 mm length were grown with 6.54 atomic percentage of Bi. The grown crystals were characterized employing various techniques such as energy-dispersive X-ray analysis, X-ray diffraction, differential scanning calorimetery, infrared spectroscopy and Hall measurement.