화학공학소재연구정보센터
Journal of Crystal Growth, Vol.217, No.4, 366-370, 2000
Characterization of ZnSe/Ge material growth using the atomic force microscope
ZnSe has been grown on (100)p-Ge substrates using atmospheric pressure metal-organic chemical vapor deposition (AP-MOCVD). The quality of the grown materials has been investigated using the atomic force microscope (AFM). This study has shown that high-quality ZnSe materials can be deposited on p-Ge wafers if pre-growth surface treatment is performed.