Liquid-phase epitaxy was used to grow c-axis YBa2Cu3O7-delta thick films on NdCaO3 (110) substrates in an Y supersaturated BaO-CuO solvent. In the case of stationary substrates, the familiar root t growth kinetics is found. Substrate rotation was employed in order to induce forced convection in the liquid, thereby reducing the thickness of the diffusion boundary layer. The resulting growth kinetics showed transient and steady-state growth regimes. The transient regime extends to about 200s with root t growth kinetics. In the steady-state regime, diffusion across an established diffusion boundary layer led to a linear increase of film thickness with time. This diffusion boundary layer was estimated to be similar to 35 mu m for a substrate rotating at 200rpm. Detailed study of the film growth suggested the presence of an interface kinetics that limited the growth on a competitive basis with volume diffusion in the liquid. The phenomenological kinetic coefficient is found to be similar to 2.5 x 10(-6) m s(-1), which is significantly higher than theoretically predicted. The diffusion coefficient of Y in the solution was estimated from viscosity (Stokes-Einstein and Sutherland relations) to be around 2-9-4.3 x 10(-10) m(2) s(-1) at 990 degrees C, while the growth data gave a value of similar to 4 x 10(-10) m(2) s(-1).