The distribution coefficients and the activity coefficients of In and Ga were calculated and used for growing InxGa1-xSb crystals with x = 0.01 - 0.10. The In compositional profiles were investigated by EPMA measurements along and across the section of crystals grown by Czochralski method. A floating crucible method has been developed to grow homogeneous InxGa1-xSb crystals. By growing In0.01Ga0.98Sb crystals from In-Ga-Sb solution in an inner crucible floating in Sb-rich Ga-Sb melt the In compositional profiles were improved.