We have studied the growth characteristics of AlxGa1-xN/GaN and electronic properties of Au/AlxGa1-xN structures grown by the MOCVD variation of x. The AlxGa1-xN layers were grown on undoped GaN/sapphire (0 0 0 1) epitaxial layers in a horizontal MOCVD reactor at a reduced pressure of 300 Torr. Al composition, x in AlxGa1-xN/GaN determined by DCXRD are 0.12, 0.15, 0.19 and 0.2, respectively Nevertheless, enough feeding of TMA (trimethylaluminum) source during the growth at 300 Torr and 1070 degreesC, the mole fraction x in AlxGa1-xN did pot increase any more above 0.2. The FWHMs of the DCXRD for (0 0 0 2) diffraction from Al0.12Ga0.88N, Al0.15Ga0.85N, Al0.19Ga1-xN and Al0.2Ga0.8N are 450, 469, 502 and 474 arcsec, respectively. While the carrier concentration of AlxGa1-xN layers increases, the mobility decreases with the increase of Al mole fraction x. After fabricating Au/AlxGa1-xN Schottky diodes, electronic properties of the structures were evaluated by I-V measurement as a function of x. The breakdown voltages of Au/AlxGa1-xN diodes at reverse bias mode were in the range of 2.5-15V. And, the turn on voltages at forward bias mode were in the range of 0.5-5.0 V with the variation of x from 0.12 to 0.19. While Au/AlxGa1-xN diodes having low mole fraction of Al showed relatively good rectifing behaviors, the samples having high x exhibited very leaky I-v behaviors. The current density-voltage (J-V) characteristics at forward bias mode were also evaluated as a function of carrier concentrations which are directly related to x. From each curve of In (J) vs. V, I yielded the effective barrier heights (Phi (B),) ranging from 0.6 to 0.78 V, and the ideal factor (I) is in the range of 2.7-3.5. The barrier heights obtained in this work are close to each other, but the ideal factors are slightly different.