Structure development in hafnium dioxide thin films grown by atomic layer deposition was studied. The method allowed deposition of nanocrystalline films on silicon and silica substrates at temperatures 300-940 degreesC. The crystalline films of 30-375 nm thickness contained monoclinic HfO2, mainly, independent of the growth temperature used. Both orientation and sizes of crystallites depended on the growth temperature and film thickness. The films with most developed preferential orientation (texture) were obtained at 500 degreesC. The preferential orientation appeared because the crystallites grew faster in the directions [001] and [111] than in the other crystallographic directions. In the highly textured films grown at 500 degreesC, the crystallite sizes did not exceed 50 nm while in the films grown at 300 degreesC and 940 degreesC they reached 100 nm. Variation of precursor doses at the growth temperature 940 degreesC allowed us to obtain preferentially oriented monoclinic and/or randomly oriented cubic structure at the thin-film surface.