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Journal of Crystal Growth, Vol.220, No.4, 631-636, 2000
A new model of morphological instabilities during epitaxial growth: from step bunching to mounds formation
We show that the theoretical description of the spontaneous evolution of an epitaxially growing surface towards self-organised structures, changes qualitatively when the simultaneous presence of several chemical species is taken into account. In the framework of a two-particle model studied by Monte-Carlo simulations we prove that a growing surface can exhibit step meandering, step bunching and mounding in different growth regimes, assuming only positive Ehrlich-Schwoebel step-edge barrier.
Keywords:models of surface kinetics;molecular beam epitaxy;chemical vapour deposition;step formation and bunching