Journal of Crystal Growth, Vol.221, 37-40, 2000
Perfect "fractal" behavior in XRD pattern of Ga(As,P) Fibonacci lattice grown by atomic layer epitaxy
Fractal behavior in X-ray diffraction (XRD) from a Ga(As, P) fractal-structured lattice grown by atomic layer epitaxy (ALE) has been discussed. Fibonacci progression for the 11th generation was used as the fractal arrangement of lattice. Self-similar geometry particular to fractal has been confirmed by a conventional XRD measurement system using CuKx1 radiation. In addition, the XRD spectrum shows a good agreement with the result of fast-Fourier transform (FFT) analysis, and the perfect fractal behavior for the 11th generated lattice arrangement. We can conclude that ALE is the most powerful tool for synthesis of the fractal-structured lattice.