The growth of Zn-doped AlxGa1-xAs using diethylzinc (DEZ) with trimethylgallium (TMG), trimethylaluminum (TMA), and arsine (AsH3) was studied using a low-pressure disk-rotating metal organic vapor-phase epitaxy (MOVPE) system. AsH3 flow rate was found to affect the activation energy of Zn incorporation in AlxGa1-xAs. DEZ introduction was also influenced by the growth rate, Al composition, and impurity incorporation. The existence of Zn intermediate on the surface probably plays an important role in these effects.