MOVPE growth is used to prepare high-quality v-groove quantum wires in the AlGaAs/GaAs system. The particular aim of this work is to find suitable precursor combinations and growth conditions with which quantum wire structures can be achieved, where only the lowest subband is occupied and on which truly one-dimensional transport can be studied. Different precursor combinations of triethylgallium (TEGa), trimethylgallium (TMGa), trimethylaluminium (TMAl) and dimethylethylaminenalane (DMEAAl) were employed for growth of the Al0.30Ga0.70As barrier layer. Calculations of the 2D-Schrodinger-equation show, that suitable quantum wire geometries are obtained when using combinations with TMGa. High-quality material is achieved at 575 degreesC for TMGa/DMEAAl and 595 degreesC for TMGa/TMAl. In general, lower grow-th temperatures lead to the preferential lower radii of curvature for a given precursor combination. A comparison of the best two combinations shows that TMGa/TMAl is best suited for growth of the Al0.30Ga0.70As barrier layer with respect to the intended application.