We report on the epitaxial growth and the resulting optical characteristics of B0.01Ga0.99N/Al0.12Ga0.88N multiquantum wells (MQW) grown by metalorganic vapor-phase epitaxy (MOVPE). The room-temperature photoluminescence (PL) of B0.01Ga0.99N/Al0.12Ga0.88N MQWs was observed at 360.4nm. The calculated PL energy shift from GaN/6H-SiC was 50 meV. The PL peak energy shift resulted from a quantized energy shift (10 meV), the effect of boron composition (16 meV), and the effect of a smaller tensile residual strain along the a-axis (the effect of the smaller compressive residual strain along the c-axis of similar to 0.17%) (24 meV). The emission intensity from the B0.01Ga0.99N/ Al0.12Ga0.88N MQW structure at room temperature was three-fold higher than that of the B0.01Ga0.99N grown directly on a 6H-SiC substrate because of the tensile strain along the a-axis in the B0.01Ga0.99N/Al0.12Ga0.88N MQW structure.