In this paper we present the achievement of high-quality strained InGaAs/GaAs piezoelectric quantum wells embedded in a P-I-N structure which was grown on a (1 1 1)A GaAs substrate at a single temperature by atmospheric pressure metalorganic vapor-phase epitaxy, The growth conditions and the structural and optical properties of a 10-period multi-quantum well structure with an In content of 13% in the wells are presented. High-resolution X-ray diffractometry studies show good crystalline and interfacial quality. as well as good repeatability of the quantum well parameters. A photoluminescence full-width at half-maximum value of 11 meV at 12 K was determined for the principal quantum well interband transition. A monolayer analysis of the principal optical transition, which includes the piezoelectric field, indicates a well width fluctuation of less than +/- 1 monolayer over the 10 quantum well periods.