A high-emission-power n-side-up-type AlGaInP yellowish-green (YG) DH-LED has been developed by operation current spreading technique utilizing dispersive ohmic electrodes configured above LP-MOVPE-grown n-AlGaInP cladding layer. The configuration of the ohmic electrodes was optimized based on the theoretical calculation of spreading manner of operation current supplied through low-resistive indium-tin-oxide (ITO) current spreading layer. The AlGaInP DH-LED equipped with the dispersive ohmic electrodes and ITO window layer gave luminous intensity reaching up to 35 mcd at the dominant wavelength of 574 nm. The forward voltage (V-t) was kept in the range between 1.9 and 2.2 V at a forward current of 20 mA. By the optimization of ohmic configuration and the transparent ITO window, the homogenous luminous intensity was obtained from the whole of the emission area of the DH-LED.