Preliminary results of growth of gallium arsenide poly-crystalline films on quartz glass substrate are reported. The films were grown using chemical beam epitaxy apparatus at substrate temperatures varied between 400 degreesC and 500 degreesC, The growth of polycrystalline GaAs has been realized at temperatures above 450 degreesC. X-ray diffraction (XRD) and Raman scattering show that the film grown at 500 degreesC has good crystallinity. Also, XRD and atomic force microscopy (AFM) have confirmed preferential columnar growth toward the (1 1 1) direction. Furthermore, AFM image reveals a naturally textured surface with a grain size of 0.5 - 1.0 mum. Optical energy gap, deduced from absorption coefficient of the film, is about 1.4eV. Hall measurement indicates electrical properties such as resistivity, carrier concentration, and carrier mobility of similar to 10(3) Omega cm, similar to 10(15) cm(-3), and less than a few cm(2)/Vs, respectively. The results reveal future prospects of the film for application in space solar cells.