The surface morphology of GaAs layers grown by epitaxial lateral overgrowth is studied by Makyoh topography. Bending of the individual stripes of the layer are observed and quantified. Various defects related to the imperfections of the growth are also observed. The results are compared to surface-stylus and X-ray diffraction measurements. The results show that Makyoh technique is a useful tool for simple. fast and routine assessment of such structures.