화학공학소재연구정보센터
Journal of Crystal Growth, Vol.224, No.3-4, 195-203, 2001
Computational study on the CVT of the ZnSe-I-2 material system
For the crystal growth of ZnSe from the gas phase by chemical vapour transport (CVT), the fluid flour and the temperature and species concentration fields are calculated with the finite element code FIDAP (TM). The problem is treated in three dimensions. The transport rate of the crystal building species is analysed at the vapour-crystal interface and compared with experimental values.