A novel technique using silicon tubes for the production of bulk polysilicon via chemical vapor deposition is presented. Our experimental studies with a model reactor indicate that the polysilicon growth inside the silicon tube (15.3 g) exceeds that of the calculated polysilicon growth on silicon slim rods (4.3 g) over 55 h of deposition time. A computational model is also being developed to simulate the growth rates of the model reactor. Preliminary computational results from this model show a slightly asymmetric temperature distribution at the reactor center line with a 1000sccm argon flow at 850 degreesC reactor temperature. Both these experimental and computational modeling studies have identified key criteria for the prototype reactor being designed for bulk polysilicon growth.