The growth conditions for GaInAsSb and AlGaAsSb using metal-organic chemical vapor deposition in an high speed rotating disk reactor are described. Trimethylindium, triethylgallium, arsine, and trimethylantimony were used as precursors for the growth of GaInAsSb. Triethylgallium, ethyldimethylamine alane, triethylantimony, and arsine were the precursors used for the growth of AlGaAsSb. These materials were doped both n- and p-type using a mixture of diethyltellurium and diethylzinc as sources. An optimum growth temperature of 520 degreesC was determined for the growth of GaInAsSb. Growth at this temperature yielded a root-mean-square (rms) surface roughness of 0.142 nm. AlGaAsSb could be grown over the range of 500-600 degreesC with somewhat rougher surfaces (rms > 0.7 nm). The photoluminescence was found to correlate with surface roughness, increasing with smoother surfaces. AlCaAsSb mesa isolated diodes were prepared and characterized. These diodes showed good current-voltage characteristics with breakdown voltages greater than -6V.