Journal of Crystal Growth, Vol.225, No.2-4, 540-543, 2001
Effect of H-2 addition on characteristics of TiN films deposited by APCVD
The TiN films prepared from TiCl4 and NH3 by atmospheric pressure chemical vapor deposition (APCVD) were investigated in the presence of H-2 It was found that the growth rate of TiN films decreased linearly by adding H-2 UP to 20 vol%, while further addition of H-2 no apparent effect was observed on the growth rate of TiN films. The morphology of TiN films obtained changed from smooth to dome-like surface then to nodular grain-rich by increasing the H-2 addition as observed by SEM. It was also observed that the TC (texture coefficient) value of (1 1 1) increased remarkably but that of (2 0 0) decreased by adding 10 vol% of H-2. Nevertheless, further addition of H-2, the TC value of (1 1 1) decreased slightly but that of (2 0 0) increased.