A new broad area (BA) structure laser has been designed with a weak lateral index waveguide, an optical coupling layer and nonabsorbing windows to improve the light output properties of BA lasers. The wafer has been grown successfully by MBE and the BA stripe has been obtained mainly by an impurity-free vacancy diffusion (IFVD) technique. The prepared devices have been measured with a maximum output power of 3.2 W. A satisfactory far field (theta (parallel to)) output property is also obtained.