We investigated the molecular-beam epitaxy and the properties of GaAsSbN compound with a low N content in quantum well structures on GaAs. This alloy appears to be an interesting alternative for GaAs-based devices emitting in the 1.3-1.55 mum wavelength range. Favorable comparison with the GaInAsN alloy is presented in terms of emission at longer wavelengths. Photoluminescence and annealing studies of GaAsSbN showed characteristics comparable to those already reported for GaInAsN. Carrier recombinations are dominated by extrinsic transitions in as-grown samples. Thermal anneal drastically improves the photoluminescence properties.