InAs/InAsxSb1-x single quantum well (SQW) p i-n structures have been grown on p(4)-InAs(0 0 1) substrates by molecular-beam epitaxy. Significant improvements in SQW light emitting diode performance have been realized by the incorporation of strained electron barrier layers. Room temperature performance has increased by a factor of up to 7. Additional 4 K magneto-electro-luminescence measurements demonstrate the good materials quality.