Journal of Crystal Growth, Vol.227, 688-692, 2001
Auger parameter shift and extra-atomic-relaxation of ZnS1-xTex alloys
Auger parameter shifts of Zn and Te as a function of composition of 3 relatively unexplored semi-insulator ZnS1-xTex alloy system were studied using X-ray photoelectron spectroscopy (XPS). A model based on the concept of relaxation is used to explain the polarization change of this alloy system due to the existence of the two core holes left in the Auger process. To complement this theoretical model, the dielectric constants of ZnS1-xTex alloys as a function of composition were measured using a structure similar to a parallel plate capacitor. The Auger parameter shifts calculated from this model are in good agreement with that obtained from the XPS measurement.
Keywords:auger parameter shift;extra-atomic relaxation;molecular beam epitaxy;semiconducting II-VI materials