Since 1996, we have been investigating the crystal growth of 400-mm silicon crystals as the next generation of silicon wafer size after 300 mm. The first dislocation-free crystal was grown in 1998, and the heaviest dislocation free crystal ever, weighing 413 kg, was safely grown in 2000 using a crystal suspending system. In this paper, we describe an experimental study on large-diameter silicon crystal growth, its growth conditions, and the crystal properties of 400-mm silicon crystals.