Journal of Crystal Growth, Vol.229, No.1, 104-108, 2001
Growth and characterization of ZnSe/BeTe superlattices
We have studied the growth and properties of ZnSe/BeTe superlattices by molecular beam epitaxy for two interface configurations, which are basically characterized by a "ZnTe" and a "BeSe" interface layer. The interface properties for the two interface configurations have been studied by means of reflection high energy electron diffraction, high resolution X-ray diffraction, and photoluminescence. It is shown that the optical and structural properties of ZnSe/BeTe superlattices are improved with a ZnTe interface compared to a BeSe interface.
Keywords:high resolution X-ray diffraction;interfaces;molecular beam epitaxy;superlattices;superconducting II-VI materials