The effect of the carrier gases H-2 or a N-2/H-2 (90%/10%) mixture with the group-V precursors TBA, TBP, PH3 and AsH3 on the distribution coefficient of Zn in InP and In0.54Ga0.46As has been investigated. Changing from PH3 to TBP as the group-V precursor increases the incorporation efficiency of Zn, whereas the opposite effect is observed for the change from AsH3 to TBA. Furthermore, for In0.54Ga0.46As and InP the distribution coefficient of Zn increases and is less sensitive to V/III ratio variations when using N-2/H-2 (90%/10%) as carrier gas instead of H-2.