The growth of Si film from Cu-Si solution with temperature gradient was conducted experimentally and examined by a simplified diffusion-controlled growth model calculation. It was found that the relation between the grown film thickness distribution along the temperature gradient direction and the cooling rate could be explained by the model calculation, and values for binary diffusion coefficient in the Cu-Si solution was estimated. The experimental results showed that a uniform film growth at the cooling rate as high as 0.1 degreesC/s was possible. (C) 2002 Elsevier Science B.V. All rights reserved.