High quality homoepitaxial 6H-SiC films have been grown by solid-source molecular beam epitaxy (MBE) using C-60 and Si effusion cells. Scanning electron micrographs show terraced surfaces indicative of step-flow growth. Cross-sectional transmission electron microscopy results demonstrate extremely good epitaxial growth with no hint of dislocations, double-positioning boundaries, or 3C inclusions. We believe this is the first report of homoepitaxy of 6H-SiC using C-60 and the first instance of silicon carbide (SiC) epitaxy using a Si effusion cell in the evaporation rather than the sublimation mode. This combination of solid-source MBE and determination of appropriate growth conditions have led to superior homoepitaxial growth of 6H-SiC. Published by Elsevier Science B.V.