Brush plating technique has been adopted for the first time to coat tin selenide thin film on tin oxide coated conducting substrates at room temperature, 50degreesC and 60degreesC. Uniform and pinhole free films were deposited at potentials 5.0 V. XRD analyses show the polycrystalline nature of the films with orthorhombic structure. Optical studies show the indirect nature with a bandgap of 1.0 eV. SEM pictures show smooth and uniform surface morphology with a grain size of about 0.3 mum. Film roughness was characterized by atomic force microscopy. Mott-Schottky plot has been drawn to evaluate the semiconductor parameters. (C) 2002 Published by Elsevier Science B.V.